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| dc.contributor.author | Apurba, Hasinur Rahman | |
| dc.contributor.author | Rasel, Md. Mazharul Islam | |
| dc.contributor.author | Shawon, M. M. Abu Shahria | |
| dc.date.accessioned | 2021-10-01T03:58:52Z | |
| dc.date.available | 2021-10-01T03:58:52Z | |
| dc.date.issued | 2014-11-15 | |
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| dc.identifier.uri | http://hdl.handle.net/123456789/1040 | |
| dc.description | Supervised by Dr. Syed Iftekhar Ali, Associate Professor, Department of Electrical and Electronic Engineering(EEE), Islamic University of Technology (IUT), Board Bazar, Gazipur-1704, Bangladesh | en_US |
| dc.description.abstract | With the advancement of technology, the necessity of devices in nanometer range has gone up. A new addition in this nano device family is Graphene based Field Effect Transistor or GFET. Graphene is a single sheet of graphite and it has some amazing properties those made it possible to use it in the fabrication of GFET. The main difference of this device with the regular FETs is that the channel of GFET is of single layer Graphene flake. The fabrication process is a bit complex due to ensure the use of SINGLE layer Graphene flake as the channel of the GFET. There are a few fabrication processes depending on what kind of GFET is being tried to be fabricated. There have been so many experiments to find out the characteristics of GFET and they seem to very unique according to their types. Different GFET models are being tried to be developed by the specialists lately to operate them in newer levels and there are some revolutionary inventions happened on that matter. The potential uses of GFET are amazing which makes us think that may be it would be a great idea to work further on the application of GFET. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Department of Electrical and Electronic Engineering, Islamic University of Technology (IUT), Board Bazar, Gazipur-1704, Bangladesh | en_US |
| dc.title | A Review on Graphene Based Field Effect Transistor (GFET) | en_US |
| dc.type | Thesis | en_US |
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