Efficiency Loss Due To Defects In AlGaAs/GaAs Hetero-junction Solar Cell

Rahman, Khandaker Md. Sydur; Hossain, MD. Tasnim; Ahsan, Sadi M Jawad; Hasoneh, Odai Waheed Amin

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dc.contributor.author	Rahman, Khandaker Md. Sydur
dc.contributor.author	Hossain, MD. Tasnim
dc.contributor.author	Ahsan, Sadi M Jawad
dc.contributor.author	Hasoneh, Odai Waheed Amin
dc.date.accessioned	2021-10-01T04:57:26Z
dc.date.available	2021-10-01T04:57:26Z
dc.date.issued	2014-11-15
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dc.identifier.uri	http://hdl.handle.net/123456789/1048
dc.description	Supervised by Prof. Dr. Md. Ashraful Hoque, Professor, Co-Supervised by K. A. S. M. Ehteshamul Haque Lecturer Department of Electrical and Electronic Engineering (EEE), Islamic University of Technology (IUT), Board Bazar, Gazipur-1704, Bangladesh.	en_US
dc.description.abstract	The principle of Energy conservation is -Energy can neither be created nor be destroyed, it can only be converted from one form to another. So energy conversion efficiency is a major issue for photovoltaic cells. Researchers are continuously trying to improve the efficiency level of photovoltaic devices by introducing new materials and advanced concepts. The target is to reach a high efficiency level within affordable cost, which will lead to a mass generation of electricity using photovoltaic devices. In this work, a III-V hetero-junction solar cell has been introduced and characterized, which uses an AlxGa1-xAs/GaAs hetero-junction as the working p-n junction. ADEPT, 1D simulation software was used throughout the whole work for the simulation of light J-V characteristics for different designs. Energy conversion efficiency for each design was calculated from its corresponding light J-V characteristics curve. An illumination level of 1000 W/m2 (AM1.5G standard) and a concentration level of 1 sun was considered for all the simulations in the work. The photovoltaic cell has an non- p structure, where the n-type AlxGa1-xAs layer acts as an base, and the p-type GaAs layer serves as the emitter. The base thickness was kept at 2 μm. Germanium (Ge) substrate (p-doped) was used for the structure. We used ADAPT software for simulating J-V curve. From the curves, we got Open circuit voltage Voc and short circuit current Isc . Then, from these, Fill Factor and efficiency was calculated for each mole fraction of 0 to 1 with a gap of 0.01. And, then generation on electron hole pair was calculated. Then parameters including absorption coefficient α(λ), number of photons φ0 were calculated for a mole fraction of 0 to 1 with a gap of 0.01 . Short circuit current and open circuit voltage were calculated and from that, fill factor and efficiency was calculated for each mole fraction from 0 to 1 with a gap of 0.01. Then, simulated efficiency and theoretical efficiency were plotted against mole fraction from 0 to 1. And then, efficiency loss vs. mole fraction was plotted.	en_US
dc.language.iso	en	en_US
dc.publisher	Department of Electrical and Electronic Engineering, Islamic University of Technology (IUT), Board Bazar, Gazipur-1704, Bangladesh	en_US
dc.title	Efficiency Loss Due To Defects In AlGaAs/GaAs Hetero-junction Solar Cell	en_US
dc.type	Thesis	en_US