Abstract:
This study presents an innovative approach to designing an SOI ring resonator
with enhanced sensing capabilities. Through meticulous optimization, we
achieved an impressive figure of merit (FOM) of 56.15, indicating the
remarkable efficiency of the device. Moreover, by incorporating a graphene
layer atop the SiO2 substrate, we effectively improved the interaction of light
with the material, resulting in a notable sensitivity of 730 nm/RIU. To further
enhance the sensor properties, we employed a plasmonic effect strategy by
strategically placing a gold nano disk at the center of the ring structure on the
graphene layer. Utilizing the FDTD method, we conducted comprehensive
simulations to evaluate the performance of the proposed device in terms of
sensitivity and FOM. The outstanding sensitivity of the device to changes in
refractive index, as demonstrated by the simulation results, makes it a
compelling choice for a wide range of sensing applications. The proposed
design not only serves as a valuable blueprint for device fabrication but also
paves the way for its practical implementation in real-world scenarios.
Description:
Supervised by
Mr. Omar Faruque,
Associate Professor,
Department of Electrical and Electronics Engineering (EEE)
Islamic University of Technology (IUT)
Board Bazar, Gazipur-1704, Bangladesh