Hysteresis Characteristics Analysis for Ferroelectric TFTS and It’s Application to Dram

Mahmud, Shah Md. Ashik; Islam, Shadid; Wornob, Shafaiet Newaz; Basher, Md.Khairul

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dc.contributor.author	Mahmud, Shah Md. Ashik
dc.contributor.author	Islam, Shadid
dc.contributor.author	Wornob, Shafaiet Newaz
dc.contributor.author	Basher, Md.Khairul
dc.date.accessioned	2025-03-05T05:33:31Z
dc.date.available	2025-03-05T05:33:31Z
dc.date.issued	2024-06-26
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Ramesh, “Room-temperature multiferroicity in BiFeO₃ films,” Science, vol. 299, no. 5613, pp. 1719-1722, Mar. 2003. 65. M. Dawber, “Ferroelectricity in thin films: challenges and opportunities,” J. Mater. Sci., vol. 41, no. 1, pp. 3-7, Jan. 2006. 66. A. K. Tagantsev, L. E. Cross, and J. Fousek, Domains in Ferroic Crystals and Thin Films. Springer, 2010. 67. A. K. Tagantsev, “Landau theory of phase transitions in ferroelectric thin films,” Phys. Rev. B, vol. 48, no. 6, pp. 2727-2740, Aug. 1993. 68. S. W. Cheong and M. Mostovoy, “Multiferroics: A magnetic twist for ferroelectricity,” Nat. Mater., vol. 6, no. 1, pp. 13-20, Jan. 2007. 69. J. F. Scott, “Ferroelectric memories,” Science, vol. 315, no. 5814, pp. 954-959, Feb. 2007. 70. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, “Epitaxial BiFeO₃ multiferroic thin film heterostructures,” Science, vol. 299, no. 5613, pp. 1719-1722, Mar. 2003. 71. R. Waser, R. Dittmann, G. Staikov, and K. Szot, “Redox-based resistive switching memories—nanoionic mechanisms, prospects, and challenges,” Adv. Mater., vol. 21, no. 25-26, pp. 2632-2663, Jul. 2009. 72. M. G. Han, B. B. Nelson-Cheeseman, B. Hehlen, D. G. Schlom, and C. R. Ahn, “Temperature-dependent domain wall dynamics and ferroelectric switching in epitaxial PbZr₀.₂Ti₀.₈O₃ thin films,” Phys. Rev. B, vol. 81, no. 14, p. 144431, Apr. 2010. 73. E. V. Colla, L. K. Chao, M. B. Weissman, and D. D. Viehland, “Observation of fatigue induced nanoscale switching in lead zirconate titanate,” Appl. Phys. Lett., vol. 72, no. 22, pp. 2763-2765, Jun. 1998. 74. J. F. Scott, “Ferroelectric memories,” Science, vol. 315, no. 5814, pp. 954-959, Feb. 2007. 75. N. Setter, D. Damjanovic, L. Eng, G. Fox, S. Hong, H. Kohlstedt, N. Kingon, R. Stucki, E. Taylor, and T. Yamada, “Ferroelectric thin films: Review of materials, properties, and applications,” J. Appl. Phys., vol. 100, no. 5, p. 051606, Sep. 2006	en_US
dc.identifier.uri	http://hdl.handle.net/123456789/2351
dc.description	Supervised by Dr. Mohammad Masum Billah, Assistant Professor, Department of Electrical and Electronic Engineering (EEE) Islamic University of Technology (IUT) Board Bazar, Gazipur, Bangladesh This thesis is submitted in partial fulfillment of the requirement for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2024	en_US
dc.description.abstract	This thesis presents a brief analysis of the hysteresis characteristics of various ferroelectric materials. Ferroelectric materials shows spontaneous remanent polarization that can be modified by an external field. This property is crucial for applications in non-volatile memories, actuators, and sensors. By examining hysteresis loops, the study aims to understand the distinct behavior of ferroelectric materials under different electric fields and their impact on practical applications. Experimental and theoretical approaches are used to elucidate the mechanisms driving hysteresis in ferroelectrics, providing insights into optimizing material performance for specific applications.	en_US
dc.language.iso	en	en_US
dc.publisher	Department of Electrical and Elecrtonics Engineering(EEE), Islamic University of Technology(IUT), Board Bazar, Gazipur-1704, Bangladesh	en_US
dc.title	Hysteresis Characteristics Analysis for Ferroelectric TFTS and It’s Application to Dram	en_US
dc.type	Thesis	en_US