Quantum dot lasers

Hossain, Mohammed Eshphaq; Irfan, Muhammad Sami; Hasan, Mehedi; Hossain, AKM Salman

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dc.contributor.author	Hossain, Mohammed Eshphaq
dc.contributor.author	Irfan, Muhammad Sami
dc.contributor.author	Hasan, Mehedi
dc.contributor.author	Hossain, AKM Salman
dc.date.accessioned	2018-10-03T05:22:45Z
dc.date.available	2018-10-03T05:22:45Z
dc.date.issued	2017-11-15
dc.identifier.citation	[1] Huiyun Liu*, Ting Wang, Qi Jiang, Richard Hogg, Frank Tutu1, Francesca Pozzi1 and Alwyn Seeds. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate. Nature Photonics 5, 416–419 (2011) [2] David Gready, Gadi Eisenstein, Fellow, IEEE, Vitalii Ivanov, Christian Gilfert, Florian Schnabel, Anna Rippien, Johann Peter Reithmaier, Fellow, IEEE, and Carsten Bornholdt. High Speed 1.55 μm InAs/InGaAlAs/InP Quantum Dot Lasers. IEEE Photonics Technology Letters ( Volume: 26, Issue: 1, Jan.1, 2014 ) [3] Yating Wan, , Qiang Li, , Alan Y. Liu, , Weng W. Chow, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, and Kei May Lau, Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates. Appl. Phys. Lett. 108, 221101 (2016) [4] Alan Y. Liu, Chong Zhang, Justin Norman, Andrew Snyder, Dmitri Lubyshev, Joel M. Fastenau, Amy W. K. Liu, Arthur C. Gossard, and John E. Bowers. High performance continuous wave 1.3m quantum dot lasers on silicon. Appl. Phys. Lett 104, 041104 (2014) [5] Siming Chen, Wei Li, Jiang Wu, Qi Jiang, Mingchu Tang, Samuel Shutts, Stella N. Elliott, Angela Sobiesierski, Alwyn J. Seeds1, Ian Ross, Peter M. Smowton and Huiyun Liu. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photonics 10, 307–311 (2016). [6] Kristian Lund Jensen, Jesper Toft Kristensen, Jakob Rosenkrantz de Lasson.Semiconductor Quantum Dots.(2008) [7] Huizi Diwu, Betul Arda. Quantum Dot Lasers. [8] K. Lüdge et al., "Turn-on dynamics and modulation response in semiconductor quantum dot lasers," Physical Review B (published 17 July 2008). [9] R.V.N. Melnik and M. Willatzen, "Bandstructures of conical quantum dots with wetting layers," Institute of Physics Publishing (published 10 November 2003). [10] I. Vurgaftman and J. R. Meyer, "Band parameters for III-V compound semiconductors and their alloys," J. Appl. Phys., Vol. 89, No. 11, 1 June 2001, pp. 5825-5826.	en_US
dc.identifier.uri	http://hdl.handle.net/123456789/265
dc.description.abstract	Semiconductor quantum dots have gained considerable research interest in the recent years. Their unique tunable electrical and optical properties make them ideal for applications in transistors, LEDs, lasers and solar cells. In particular their application in semiconductor laser is an area of research that draws considerable interest. In this work, we review the recent advancements in quantum dot laser technology. A brief review of semiconductor nanostructures and quantum confinement effect is presented at the beginning. Various fabrication methods of quantum dots are discussed as well. Secondly, we examined the physical properties of quantum dot lasers along with history and development of quantum dot laser technology and different kinds of quantum dot lasers comparing with other types of lasers. Finally, we describe the rate equation model for quantum dot lasers, simulate the model in MATLAB software package and discuss the results obtained from the simulation	en_US
dc.language.iso	en	en_US
dc.publisher	Department of Electrical and Electronic Engineering, Islamic University of Technology	en_US
dc.title	Quantum dot lasers	en_US
dc.type	Thesis	en_US